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the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. mos integrated circuit pd168101 monolithic quad h-bridge driver circuit document no. s14846ej1v0ds00 (1st edition) date published april 2001 n cp(k) printed in japan data sheet ? 2001 description the pd168101 is monolithic quad h-bridge driver lsi which uses power mosfets in the output stages. by using the mos process, this driver ic has substantially improved the voltage loss of the output stage and power consumption as compared with conventional driver circuits using bipolar transistors. by eliminating the charge pump circuit, the current during power-off is drastically decreased. in addition, a low-voltage malfunction prevention circuit is also provided that prevents the ic from malfunctioning when the supply voltage drops. as the package, a 24-pin plastic tssop is adopted to enable the creation of compact, slim application sets. this driver ic can drive two stepping motor at the same time, and is ideal for driving stepping motors in the lens of a camera. it is the best for lens drive drivers, such as a digital camera and a video camera. moreover, since the input of two terminals is respectively owned to h bridge 1 circuit, a maximum of four loads, such as dc motor, can be driven simultaneously. features four h bridge circuits employing power mosfets low current consumption by eliminating charge pump v m pin current when power-off: 10 a max. v dd pin current: 10 a max. input logic frequency: 100 khz 3-v power supply minimum operating supply voltage: 2.5 v low voltage malfunction prevention circuit 24-pin plastic tssop (5.72 mm (225)) ordering information part number package pd168101ma-6a5 24-pin plastic tssop (5.72 mm (225))
data sheet s14846ej1v0ds 2 pd168101 absolute maximum ratings (t a = 25 c) when mounted on a glass epoxy board (10 cm 10 cm 1 mm, 15% copper foil) parameter symbol condition rating unit v dd ? 0.5 to +6.0 v control block supply voltage v m ? 0.5 to +6.0 v input voltage v in ? 0.5 to v dd + 0.5 v output terminal voltage v out 6.2 v i m(dc) dc 0.35 a/ch output current i m(pulse) pw 10 ms, duty 5% 0.7 a/ch power consumption p t 0.7 w peak junction temperature t ch(max) 150 c storage temperature range t stg ? 55 to +150 c recommended operating conditions when mounted on a glass epoxy board (10 cm 10 cm 1 mm, 15% copper foil) parameter symbol condition min. typ. max. unit v dd 2.5 5.5 v control block supply voltage v m 2.7 5.5 v output current i m(dc) dc ? 0.25 +0.25 a operating frequency f in in terminal 100 khz operating temperature range t a ? 10 85 c peak junction temperature t ch(max) 125 c
data sheet s14846ej1v0ds 3 pd168101 characteristics (unless otherwise specified, v dd = v m = 3 v, t a = 25 c) parameter symbol condition min. typ. max. unit off state v m pin current i m(off) all control terminal = 0 v per v m terminal 10 a v dd terminal current at the time of standby i dd(st) all control terminal = 0 v 10 a v dd terminal current at the time of operation i dd 1ma high level input current i ih v in = v dd 0.06 ma low level input current i il v in = 0 v ? 1.0 a input pull down resistance r ind 50 200 k ? high level input voltage v ih 2.5 v v dd 5.5 v 0.7 v dd v dd +0.3 v low level input voltage v il 2.5 v v dd 5.5 v ? 0.3 0.3 v dd v h-bridge on resistance r on 2.7 v v m = v dd 5.5 v i m = 0.25 a, upper + lower 0.7 1.1 ? v dds1 v m = 5 v, ? 10 c t a +85 c0.8 2.5 v low voltage malfunction prevention circuit operating voltage v dds2 v m = 3 v, ? 10 c t a +85 c 0.65 2.5 v h bridge output turn-on time 1 t on1 1.0 s h bridge output turn-on time 2 t on2 0.7 2.0 s h bridge output turn-off time t off 0.2 0.5 s h bridge output rise time t r 0.3 1.0 s h bridge output fall time t f r m = 20 ? , figure 1 t on1 : turn-on time from all control = 0 v t on2 : turn-on time at operation 0.07 0.2 s remarks 1. as for thermal shutdown circuit (tsd), junction temperature operates above 150 c. at the time of over thermal detection, current supply is stopped by making all output terminals into high impedance. in addition, thermal shutdown circuit does not operate at the time of standby. 2. a low voltage malfunction operation prevention circuit operates, if a voltage power supply (v dd ) becomes less than 2.5 v. all output terminals be high impedance at the time of uvlo operation.
data sheet s14846ej1v0ds 4 pd168101 figure 1. switching time condition (1) in2 = low-level 100% v in1 i m out1a out1b hi-z hi-z t on t off t f t r 10% 10% 10% 90% 90% 90% (2) in2 = high-level 100% v in1 i m out1b out1a out1b out1a brake t off t on t r t f 10% 10% 10% 90% 90% 90% function table the logic of each channel is as follows channel 1 channel 2 in1 in2 out1a out1b in3 in4 out2a out2b llzz llzz lhlh lhlh hlhl hlhl hhl l hhl l channel 3 channel 4 in5 in6 out3a out3b in7 in8 out4a out4b llzz llzz lhlh lhlh hlhl hlhl hhl l hhl l h: high-level, l: low-level, z: high impedance when all control pin is low-level, ic becomes stand-by state and current consumption is reduced.
data sheet s14846ej1v0ds 5 pd168101 pin connection v m1 out1a pgnd out2a out3a pgnd out4a v m4 in1 in2 in3 in4 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 v dd out1b pgnd out2b v m23 out3b pgnd out4b in8 in7 in6 in5 pin no. pin name pin function 1v m1 output block supply voltage input terminal 2 out1a output terminal 3 pgnd ground terminal 4 out2a output terminal 5 out3a output terminal 6 pgnd ground terminal 7 out4a output terminal 8v m4 output block supply voltage input terminal 9 in1 control terminal (channel 1) 10 in2 control terminal (channel 1) 11 in3 control terminal (channel 2) 12 in4 control terminal (channel 2) 13 in5 control terminal (channel 3) 14 in6 control terminal (channel 3) 15 in7 control terminal (channel 4) 16 in8 control terminal (channel 4) 17 out4b output terminal 18 pgnd ground terminal 19 out3b output terminal 20 v m23 output block supply voltage input terminal 21 out2b output terminal 22 pgnd ground terminal 23 out1b output terminal 24 v dd control block supply voltage input terminal
data sheet s14846ej1v0ds 6 pd168101 block diagram uvlo tsd in 1 9 10 1 24 2 23 3 in 2 v m1 v dd 1a 1b pgnd h-bridge (1) in 3 11 12 20 4 21 22 in 4 v m2, 3 2a 2b pgnd h-bridge (2) in 5 13 14 5 19 6 in 6 3a 3b pgnd h-bridge (3) in 7 15 16 8 7 17 18 in 8 v m4 4a 4b pgnd h-bridge (4) control circuit (1) control circuit (2) control circuit (3) control circuit (4) cautions 1. the terminal which has more than one should connect not only one terminal but all terminals. 2. pull down resistance is connected to the input terminal. it?s not necessary that the input terminal is connected when it isn?t used. 3. the motor part power supply terminals v m1 , v m23 , and v m4 are separated inside, and can impress an individually different power supply. 4. the motor part power supply terminal of the output which is not used should impress voltage of recommended operation condition, or should connect to gnd. in addition, if voltage is impressed to v m terminal even when an input is open, v m terminal current (10 amax) is flow at the time of standby.
data sheet s14846ej1v0ds 7 pd168101 typical characteristics 0 123 control block supply voltage v dd (v) i dd , i dd(st) vs. v dd characteristics v dd pin current i dd , i dd(st) (ma) 456 0.2 0.4 0.6 0.8 1 i dd i dd(st) t a = 25 c 0 10 ?0 30 0.7 w 178 c/w 50 ambient temperature t a ( c) p t vs. t a characteristics total power dissipation p t (w) 70 90 100 0.2 0.4 0.6 0.8 1 123 control block supply voltage v dd (v) i ih , i il vs. v dd characteristics input current i h , i il ( a) 456 i ih i il t a = 25 c 0 123 output block supply voltage v m (v) i m vs. v m characteristics off state v m pin current i m(off) ( a) 45 6 10 5 15 20 25 30 0 20 10 30 40 50 60 t a = 25 c 0 12 3 control block supply voltage v dd (v) v ih , v il vs. v dd characteristics input voltage v ih , v il (v) 456 1 2 3 4 5 v ih , v il t a = 25 c 0 12 3 control block supply voltage v dd (v) r ind vs. v dd characteristics input pull-down resistance r ind (k ? ) 45 6 50 100 150 200 t a = 25 c
data sheet s14846ej1v0ds 8 pd168101 0 123 output block supply voltage v m (v) r on vs. v m characteristics h-bridge on resistance r on ( ? ) 456 0.5 1 1.5 t a = 25 c i m = 0.25 a v m = 2.7 v i m = 0.25 a t a = 25 c r m = 20 ? t a = 25 c output block supply voltage v m (v) detect voltage at low voltage characteristics detect voltage v dds (v) 0.5 1 1.5 2 123 output block supply voltage v m (v) t on1 , t on2 , t off vs. v m characteristics h-bridge output turn-on time t on1 , t on2 ( s) h-birdge output turn-off time t off ( s) 456 t off t on2 t on1 0 0 20 20 ambient temperature t a ( c) r on vs. t a characteristics h-bridge on resistance r on ( ? ) 40 60 80 100 0 12 34 56 0.5 1 1.5 0 0.8 0.4 1.2 1.6 2 v dd (h l) v dd (l h) t a = 25 c r m = 20 ? 123 output block supply voltage v m (v) t r , t f vs. v m characteristics h-bridge output rise time t r ( s) h-bridge output fall time t f ( s) 456 t f t r 0 0.4 0.2 0.6 0.8 1
data sheet s14846ej1v0ds 9 pd168101 standard connection example cpu dc/dc converter control circuit level shift circuit uvlo h bridge 1 h bridge 2 h bridge 3 h bridge 4 motor 1 motor 2 battery v dd = v m = 2.7 v to 5.5 v 1 to 10 f in 1 in 2 in 3 in 4 in 5 in 6 in 7 in 8 v m4 v m2, 3 v m1 1a 1b pgnd pgnd pgnd pgnd gnd 2a 2b 3a 3b 4a 4b v dd tsd 1 to 10 f this circuit diagram is an example of connection, and is not a thing aiming at mass production.
data sheet s14846ej1v0ds 10 pd168101 package dimension s 24-pin plastic tssop (5.72 mm (225)) note each lead centerline is located within 0.10 mm of its true position (t.p.) at maximum material condition. item millimeters a a' c d 6.65 0.10 6.5 0.1 0.1 0.05 f 0.5 (t.p.) g b 0.575 e 0.22 0.05 1.2 max. h 1.0 0.05 i 6.4 0.1 j 4.4 0.1 k 0.17 0.025 l 0.5 m 0.10 n 0.08 r 0.25 1.0 0.1 s 0.6 0.15 p24ma-50-6a5 p3 + 5 ? 3 24 13 1 12 m s n k f g l r s e p j dm c a b a' h i detail of lead end
data sheet s14846ej1v0ds 11 pd168101 recommended soldering conditions solder this product under the following recommended conditions. for soldering methods and conditions other than those recommended, consult nec. for details of the recommended soldering conditions, refer to information document ? semiconductor device mounting technology manual ? . soldering method soldering conditions recommended condition symbol infrared reflow package peak temperature: 235 c; time: 30 secs. max. (210 c min.); number of times: 3 times max; number of day: none; flux: rosin-based flux with little chlorine content (chlorine: 0.2wt% max.) is recommended. ir35-00-3 vps package peak temperature: 215 c; time: 40 secs. max. (200 c min.); number of times: 3 times max.; number of day: none; flux: rosin-based flux with little chlorine content (chlorine: 0.2 wt% max.) is recommended. vp15-00-3 wave soldering package peak temperature: 260 c; time: 10 secs. max.; preheating temperature: 120 c max.; number of times: once; flux: rosin-based flux with little chlorine content (chlorine: 0.2 wt% max.) is recommended. ws60-00-1 caution do not use two or more soldering methods in combination.
data sheet s14846ej1v0ds 12 pd168101 [memo]
data sheet s14846ej1v0ds 13 pd168101 [memo]
data sheet s14846ej1v0ds 14 pd168101 notes for cmos devices 1 precaution against esd for semiconductors note: strong electric field, when exposed to a mos device, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. environmental control must be adequate. when it is dry, humidifier should be used. it is recommended to avoid using insulators that easily build static electricity. semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. all test and measurement tools including work bench and floor should be grounded. the operator should be grounded using wrist strap. semiconductor devices must not be touched with bare hands. similar precautions need to be taken for pw boards with semiconductor devices on it. 2 handling of unused input pins for cmos note: no connection for cmos device inputs can be cause of malfunction. if no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. cmos devices behave differently than bipolar or nmos devices. input levels of cmos devices must be fixed high or low by using a pull-up or pull-down circuitry. each unused pin should be connected to v dd or gnd with a resistor, if it is considered to have a possibility of being an output pin. all handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 status before initialization of mos devices note: power-on does not necessarily define initial status of mos device. production process of mos does not define the initial operation status of the device. immediately after the power source is turned on, the devices with reset function have not yet been initialized. hence, power-on does not guarantee out-pin levels, i/o settings or contents of registers. device is not initialized until the reset signal is received. reset operation must be executed immediately after power-on for devices having reset function.
data sheet s14846ej1v0ds 15 pd168101 regional information some information contained in this document may vary from country to country. before using any nec product in your application, piease contact the nec office in your country to obtain a list of authorized representatives and distributors. they will verify: ? device availability ? ordering information ? product release schedule ? availability of related technical literature ? development environment specifications (for example, specifications for third-party tools and components, host computers, power plugs, ac supply voltages, and so forth) ? network requirements in addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary from country to country. nec electronics inc. (u.s.) santa clara, california tel: 408-588-6000 800-366-9782 fax: 408-588-6130 800-729-9288 nec electronics (germany) gmbh duesseldorf, germany tel: 0211-65 03 02 fax: 0211-65 03 490 nec electronics (uk) ltd. milton keynes, uk tel: 01908-691-133 fax: 01908-670-290 nec electronics italiana s.r.l. milano, italy tel: 02-66 75 41 fax: 02-66 75 42 99 nec electronics (germany) gmbh benelux office eindhoven, the netherlands tel: 040-2445845 fax: 040-2444580 nec electronics (france) s.a. velizy-villacoublay, france tel: 01-3067-5800 fax: 01-3067-5899 nec electronics (france) s.a. madrid office madrid, spain tel: 091-504-2787 fax: 091-504-2860 nec electronics (germany) gmbh scandinavia office taeby, sweden tel: 08-63 80 820 fax: 08-63 80 388 nec electronics hong kong ltd. hong kong tel: 2886-9318 fax: 2886-9022/9044 nec electronics hong kong ltd. seoul branch seoul, korea tel: 02-528-0303 fax: 02-528-4411 nec electronics singapore pte. ltd. novena square, singapore tel: 253-8311 fax: 250-3583 nec electronics taiwan ltd. taipei, taiwan tel: 02-2719-2377 fax: 02-2719-5951 nec do brasil s.a. electron devices division guarulhos-sp, brasil tel: 11-6462-6810 fax: 11-6462-6829 j01.2
pd168101 m8e 00. 4 the information in this document is current as of march, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?

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